JPS6367352B2 - - Google Patents
Info
- Publication number
- JPS6367352B2 JPS6367352B2 JP18493584A JP18493584A JPS6367352B2 JP S6367352 B2 JPS6367352 B2 JP S6367352B2 JP 18493584 A JP18493584 A JP 18493584A JP 18493584 A JP18493584 A JP 18493584A JP S6367352 B2 JPS6367352 B2 JP S6367352B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- temperature
- layer
- heater
- degassing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 14
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 12
- 238000007872 degassing Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000704 physical effect Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18493584A JPS6163078A (ja) | 1984-09-03 | 1984-09-03 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18493584A JPS6163078A (ja) | 1984-09-03 | 1984-09-03 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6163078A JPS6163078A (ja) | 1986-04-01 |
| JPS6367352B2 true JPS6367352B2 (en]) | 1988-12-26 |
Family
ID=16161920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18493584A Granted JPS6163078A (ja) | 1984-09-03 | 1984-09-03 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6163078A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0275237U (en]) * | 1988-11-30 | 1990-06-08 |
-
1984
- 1984-09-03 JP JP18493584A patent/JPS6163078A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0275237U (en]) * | 1988-11-30 | 1990-06-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6163078A (ja) | 1986-04-01 |
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